Applied Plasmonics, Inc. creates innovative intellectual
property that enables the design, development, and
fabrication of light emission devices on standard CMOS
silicon, and other substrates, by exploiting the
lithographic capabilities of mainstream semiconductor
processing in combination with vacuum microelectronics.
The company has invented a practical mass-market use for
devices based on surface plasmons. The new technology
employs nano-antennas manufactured in a single layer to
generate light.
Applied Plasmonics has resolved the two substantial
incompatibilities that existed between silicon integrated
circuits and optical transport interconnects, including:
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The inability of standard, state-of-the-art, CMOS
silicon fabrication technology to produce light.
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The inability of light producing semiconductor
processes [III-IV compound semiconductors such as GaAs,
InP, and GaInP semiconductor compounds, etc.] to support
the high-levels of transistor integration required for
leading-edge Integrated Circuits.
The Applied Plasmonics patent pending technologies eliminate
these problems and many more by providing easy integration
of light emission devices within an integrated circuit
fabricated on standard, state-of-the-art, CMOS silicon.
Our technologies also provide the ability to use light for
future intra-chip transport of signals and clocks within a
single CMOS silicon integrated circuit.
Akin to the impact that the development of the integrated
circuit had on the semiconductor market, the Applied Plasmonics disruptive light emission technologies will
transform the current semiconductor integrated circuit
market for decades to come.
Executive Officers
David S Hoover, PhD
President and CEO
Our Development Team
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